B.Sc. Computational Chemistry, NUS, 1995; Engineer, then Principal Engineer, Chartered Semiconductor Manufacturing, 1995-2001; Member of Technical Staff, Bell Laboratories, 2001-2002; Research Associate, Cavendish Laboratory, University of Cambridge, 2002-2003; Research Fellow, ONDL, Physics, NUS, 2004-2008; Ph.D. Physics, University of Cambridge.
My research program focuses on materials and processing development to advance the science and technology of polymer organic semiconductors including organic polymer−graphene hybrids. Several device chemistry aspects that is central to Organic Electronics, including structure-morphology–property relations and energy-level engineering.
Ref: Tang, C. G.; Ang, M. C. Y.; Choo, K. K.; Keerthi, V.; Tan, J. K.; Nur Syafiqah, M.; Kugler, T.; Burroughes, J. H.; Png, R. Q.; Chua, L. L.; Ho, P. K. H. Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts. Nature 2016, 539, 536 [Highlighted by Nature News & Views 2016 same issue].
To make high-performance semiconductor devices, good ohmic contacts between the electrode and the semiconductor layer are required to enable the maximum current density across the contact. Hole-doped polymer organic semiconductors are available in a limited workfunction range but hole- and electron doped materials with ultralow and ultrahigh work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migrants. Here we report a general strategy to overcome these limitations and achieved solution-processable doped films over a wide range of work function (3.0-5.8 eV).